A Compact DC-110GHz SPST Switch in 22nm FDSOI CMOS

This brief reports a compact DC-110GHz single-pole single-throw (SPST) switch in 22nm FDSOI CMOS technology. The adopts solely three n-MOSFETs, two of them with special device option to reduce the substrate parasitic effects, and third n-MOSFET parallel gate resistance series improve isolation. Unlike prior wideband mmwave switches, it does not make use any large passive components, such as spiral inductors, transformers transmission lines, which are prone including losses, require area on silicon. Altogether, novel circuit allows very design, low losses high isolation performance. exhibits an insertion loss lower than 3.1 dB, better 22 return 12 over entire frequency range from DC 110 GHz. die amounts 160 lm2, that is up or more orders magnitude smaller mm-wave SPST switches.